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Journal of Micro/Nanolithography, MEMS, and MOEMS

Pattern printability for off-axis incident light in extreme ultraviolet lithography
Author(s): Minoru Sugawara; Masaaki Ito; Taro Ogawa; Eiichi Hoshino; Akira Chiba; Shinji Okazaki
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Paper Abstract

Off-axis incident light produces shadowing and an imbalance in the diffracted light. Shadowing causes a change in the critical dimension (CD) and a shift in the position of patterns due to the multiple interference of the absorber and buffer layers. In addition, the imbalance in the diffracted light influences the optical proximity-effect correction (OPC) of actual patterns with a process factor k1 below 0.6. In this study, the main factors influencing OPC were investigated. These include asymmetric aberrations and optical proximity effects (OPE) in line patterns. OPC was then applied to a T-shaped pattern. It is found that the mask error factor (MEF) in low-contrast regions of a layout is an important consideration in OPC.

Paper Details

Date Published: 1 January 2003
PDF: 7 pages
J. Micro/Nanolith. 2(1) doi: 10.1117/1.1530571
Published in: Journal of Micro/Nanolithography, MEMS, and MOEMS Volume 2, Issue 1
Show Author Affiliations
Minoru Sugawara, Association of Super-Advanced Electronics Technologies (Japan)
Masaaki Ito, Association of Super-Advanced Electronics Technologies (Japan)
Taro Ogawa, Association of Super-Advanced Electronics Technologies (Japan)
Eiichi Hoshino, Association of Super-Advanced Electronics Technologies (Japan)
Akira Chiba, Association of Super-Advanced Electronics Technologies (Japan)
Shinji Okazaki, Association of Super-Advanced Electronics Technologies (Japan)


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