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Journal of Micro/Nanolithography, MEMS, and MOEMS

Large-field particle beam optics for projection and proximity printing and for maskless lithography
Author(s): Hans Loeschner; Gerhard Stengl; Herbert Buschbeck; A. Chalupka; Gertraud Lammer; Elmar Platzgummer; Herbert Vonach; Patrick W.H. de Jager; Rainer Kaesmaier; Albrecht Ehrmann; Stefan Hirscher; Andreas Wolter; Andreas Dietzel; Ruediger Berger; Hubert Grimm; Bruce D. Terris; Wilhelm H. Bruenger; Gerhard Gross; Olaf K. Fortagne; Dieter Adam; Michael Boehm; Hans Eichhorn; Reinhard Springer; Joerg Butschke; Florian Letzkus; Paul Ruchhoeft; John Charles Wolfe
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Paper Abstract

Recent studies have shown the utility of ion projection lithography (IPL) for the manufacturing of integrated circuits. In addition, ion projection direct structuring (IPDS) can be used for resistless, noncontact modification of materials. In cooperation with IBM Storage Technology Division, ion projection patterning of magnetic media layers has been demonstrated. With masked ion beam proximity techniques, unique capabilities for lithography on nonplanar (curved) surfaces are outlined. Designs are presented for a masked ion beam proximity lithography (MIBL) and masked ion beam direct structuring (MIBS) tool with sub-20-nm resolution capability within 88-mm exposure fields. The possibility of extremely high reduction ratios (200:1) for high-volume projection maskless lithography (projection-ML2) is discussed. In the case of projection-ML2 there are advantages of using electrons instead of ions. Including gray scaling, an improved concept for a ≤50-nm projection-ML2 system is presented with the potential to meet a throughput of 20 wafers per hour (300 mm).

Paper Details

Date Published: 1 January 2003
PDF: 15 pages
J. Micro/Nanolith. MEMS MOEMS 2(1) doi: 10.1117/1.1528946
Published in: Journal of Micro/Nanolithography, MEMS, and MOEMS Volume 2, Issue 1
Show Author Affiliations
Hans Loeschner, Ionen Mikrofabrikations Systeme GmbH (Austria)
Gerhard Stengl, IMS Nanofabrication GmbH (Austria)
Herbert Buschbeck, IMS-Ion Microfabrication Systems GmbH (Austria)
A. Chalupka, IMS (Austria)
Gertraud Lammer, IMS-Ion Microfabrication Systems GmbH (Austria)
Elmar Platzgummer, IMS Nanofabrication GmbH (Austria)
Herbert Vonach, IMS-Ion Microfabrication Systems GmbH (Austria)
Patrick W.H. de Jager, TNO TPD (Netherlands)
Rainer Kaesmaier, Infineon Technologies AG (Germany)
Albrecht Ehrmann, Infineon Technologies AG (Germany)
Stefan Hirscher, Infineon Technologies AG (Germany)
Andreas Wolter, Infineon Technologies AG (Germany)
Andreas Dietzel, IBM Storage Technology Division (Germany)
Ruediger Berger, IBM Storage Technology Division (Germany)
Hubert Grimm, IBM Storage Technology Division (Germany)
Bruce D. Terris, IBM Almaden Research Ctr. (United States)
Wilhelm H. Bruenger, Fraunhofer Gesellschaft (Germany)
Gerhard Gross, Leica Microsystems Lithography (Germany)
Olaf K. Fortagne, Leica Microsystems Lithography GmbH (Germany)
Dieter Adam, AEG Elektrofotografie GmbH (Germany)
Michael Boehm, Leica Microsystems Lithography GmbH (Germany)
Hans Eichhorn, Jenoptik Technologie GmbH (Germany)
Reinhard Springer, Institut fuer Mikroelektronik Chips (Germany)
Joerg Butschke, Institut fuer Mikroelektronik Chips (Germany)
Florian Letzkus, Institut fuer Mikroelektronik Chips (Germany)
Paul Ruchhoeft, Univ. of Houston (United States)
John Charles Wolfe, Univ. of Houston (United States)

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