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Optical Engineering

Fabrication of far-infrared photodetector based on InAs/GaAs quantum dot superlattices
Author(s): Yi-Chang Cheng; San-Te Ching-Ming Yang; Jyh-Neng Yang; Wen-Hou Lan; Liann-Be Chang; Li-Zen Hsieh
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Paper Abstract

A far-infrared photodetector based on twenty layers of self-assembled InAs/GaAs quantum dot superlattices is fabricated. Measurements by Fourier-transform infrared spectroscopy at 77 K reveal that the response of the device is in the range of 9 to 16.3 μm, with a peak absorption wavelength near 13.2 μm (756 cm–1). The electrical characteristic of the device's current-voltage response is 63 μA at –1-V bias voltage when a 1-cd light source is at 15-cm distance.

Paper Details

Date Published: 1 January 2003
PDF: 5 pages
Opt. Eng. 42(1) doi: 10.1117/1.1525277
Published in: Optical Engineering Volume 42, Issue 1
Show Author Affiliations
Yi-Chang Cheng, Ming-Hsin Institute of Technology (Taiwan)
San-Te Ching-Ming Yang, Cheng Shun Institute of Science and Technology (Taiwan)
Jyh-Neng Yang, Ming-Hsin Institute of Technology (Taiwan)
Wen-Hou Lan, Cheng Shun Institute of Science and Technology (Taiwan)
Liann-Be Chang, Chung Cheng Institute of Technology (Taiwan)
Li-Zen Hsieh, Chung Cheng Institute of Technology (Taiwan)


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