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Optical Engineering

Preparation of transparent conducting oxide films by activated reactive evaporation
Author(s): K. Narashimha Rao
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Paper Abstract

Indium-tin oxide films have been deposited by reactive electron beam evaporation of In+Sn alloy both in neutral and ionized oxygen environments. A low-energy ion source (fabricated in-house) has been used. Films deposited with neutral oxygen exhibited very low optical transmittance (5% at 550 nm). Highly transparent (85%) and low-resistivity (5×10–4 cm) films have been deposited in ionized oxygen at ambient substrate temperature. Optical and electrical properties of the films have been studied as a function of deposition parameters.

Paper Details

Date Published: 1 November 2002
PDF: 2 pages
Opt. Eng. 41(11) doi: 10.1117/1.1513798
Published in: Optical Engineering Volume 41, Issue 11
Show Author Affiliations
K. Narashimha Rao, Indian Institute of Science (India)

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