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Optical Engineering

Two different lasers integrated in a monochip by one-step epitaxy
Author(s): WeiLing Guo; Guangdi Shen; Jianjun Li; Ying Ding; Ying Liu; Guo Gao; Deshu Zou
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Paper Abstract

A new way to integrate two different lasers (LD1: 950 nm and LD2: 990 nm) in a monochip by one-step epitaxial growth is presented. These two lasers are cascaded by a high-doping tunnel junction that separates the two active regions so that a four-terminal device can be implemented, which permits the operation of the lasers electrically independent as LD1, LD2, and LD1+LD2 after fabrication process. High power dual-wavelength operation laser diodes are fabricated, output power as high as 3.1 W at 3 A and 2.4 W at 2 A is obtained, and the slope efficiency can reach 1.38 W/A. As for four-terminal integrated laser diodes, the threshold current is 54, 58, and 65 mA, and the slope efficiency is 0.73, 0.48, and 0.37 for the LD1+LD2, LD1, and LD2, respectively.

Paper Details

Date Published: 1 October 2002
PDF: 2 pages
Opt. Eng. 41(10) doi: 10.1117/1.1506372
Published in: Optical Engineering Volume 41, Issue 10
Show Author Affiliations
WeiLing Guo, Beijing Polytechnic Univ. (China)
Guangdi Shen, Beijing Polytechnic Univ. (China)
Jianjun Li, Beijing Polytechnic Univ. (China)
Ying Ding, Beijing Polytechnic University (China)
Ying Liu, Beijing Polytechnic Univ. (China)
Guo Gao, Beijing Polytechnic Univ. (China)
Deshu Zou, Beijing Polytechnic Univ. (China)

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