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Journal of Micro/Nanolithography, MEMS, and MOEMS

157 nm lithography with high numerical aperture lens for the 70 nm technology node
Author(s): Toshifumi Suganaga; Noriyoshi Kanda; Jae-Hwan Kim; Osamu Yamabe; Kunio Watanabe; Takamitsu Furukawa; Seiro Miyoshi; Toshiro Itani; Julian S. Cashmore; Malcolm C. Gower
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Paper Abstract

157 nm lithography is being investigated for the sub-70 nm technology node of semiconductor devices. Many efforts have been reported on the exposure tool, the F2 laser, the resist materials, the resist processing and the mask materials. A critical component for the success of this 157 nm lithography is the availability of high numerical aperture (NA) lenses that lead to higher resolution capability and higher process margin. In this paper, we describe our recent evaluation results of a high precision 157 nm Microstepper with 0.85 NA lens combined with simulation analysis of the lithographic performance. The details of the evaluation results discussed here include the resolution limit of the high NA lens and the possible effects of intrinsic birefringence upon the lithographic performance.

Paper Details

Date Published: 1 October 2002
PDF: 7 pages
J. Micro/Nanolith. 1(3) doi: 10.1117/1.1501565
Published in: Journal of Micro/Nanolithography, MEMS, and MOEMS Volume 1, Issue 3
Show Author Affiliations
Toshifumi Suganaga, Semiconductor Leading Edge Technologies, Inc. (Japan)
Noriyoshi Kanda, Semiconductor Leading Edge Technologies, Inc. (Japan)
Jae-Hwan Kim, Semiconductor Leading Edge Technologies, Inc. (Japan)
Osamu Yamabe, Semiconductor Leading Edge Technologies, Inc. (Japan)
Kunio Watanabe, Semiconductor Leading Edge Technologies, Inc. (Japan)
Takamitsu Furukawa, Semiconductor Leading Edge Technologies, Inc. (Japan)
Seiro Miyoshi, Semiconductor Leading Edge Technologies, Inc. (Japan)
Toshiro Itani, Semiconductor Leading Edge Technologies, Inc. (Japan)
Julian S. Cashmore, Exitech Ltd. (United Kingdom)
Malcolm C. Gower, Exitech Ltd. (United Kingdom)


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