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Optical Engineering

Modeling of the hysteretic metal-insulator transition in a vanadium dioxide infrared detector
Author(s): Luiz Alberto Luz de Almeida; Gurdip Singh Deep; Antonio Marcus Nogueira-Lima; Helmut Neff
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Paper Abstract

The vanadium dioxide (VO2) thin film, usually employed as an infrared detector, exhibits hysteresis in its resistance-temperature characteristic. Considering a polycrystalline VO2 thin film as a composite medium, containing semiconducting and metallic microcrystals, the well-known effective-medium approximation theory is employed to relate the volume fraction of the semiconducting microcrystals to the effective film resistance. A phenomenological model is first proposed for describing the hysteretic dependence of volume fraction on temperature. From this, a model for hysteresis in the resistance-temperature characteristic is then derived, and a procedure for estimating the model parameters is outlined. The model reproduces the more important hysteretic characteristics such as the major, minor, and nested loops, in good agreement with the experimental characteristics.

Paper Details

Date Published: 1 October 2002
PDF: 7 pages
Opt. Eng. 41(10) doi: 10.1117/1.1501095
Published in: Optical Engineering Volume 41, Issue 10
Show Author Affiliations
Luiz Alberto Luz de Almeida, Univ. Federal da Paraiba and Univ. Federal da Bahia (Brazil)
Gurdip Singh Deep, Univ. Federal da Paraiba (Brazil)
Antonio Marcus Nogueira-Lima, Univ. Federal da Paraiba (Brazil)
Helmut Neff, VIR-TECH A/S (Denmark)

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