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Journal of Micro/Nanolithography, MEMS, and MOEMS

Linewidth variation characterization by spatial decomposition
Author(s): Alfred K. K. Wong; Antoinette F. Molless; Timothy A. Brunner; Eric Coker; Robert H. Fair; George L. Mack; Scott M. Mansfield
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Paper Abstract

Characterization of linewidth variation by a three-step methodology is presented. Via electrical linewidth measurement, sources of linewidth variation with distinct spatial signatures are first isolated by spatial analysis. Causes with similar spatial signatures are then separated by contributor-specific measurements. Unanticipated components are lastly identified by examination of the residuals from spatial analysis. Significant sources include photomask error, flare, aberrations, development nonuniformity, and scan direction asymmetry. These components are then synthesized to quantify the contributions from the three modules of the patterning process: photomask, exposure system, and postexposure processing. Although these modules are independent of one another, their effects on linewidth variation may be correlated. Moreover, the contributions of the modules are found to vary with exposure tool, development track, and lithography strategy. The most effective means to reducing the overall linewidth variation depends on the relative importance between these components. Optical proximity correction is efficacious only for a well-controlled process where proximity effect is the predominant cause of linewidth variation.

Paper Details

Date Published: 1 July 2002
PDF: 11 pages
J. Micro/Nanolith. 1(2) doi: 10.1117/1.1488159
Published in: Journal of Micro/Nanolithography, MEMS, and MOEMS Volume 1, Issue 2
Show Author Affiliations
Alfred K. K. Wong, Univ. of Hong Kong (Hong Kong)
Antoinette F. Molless, IBM Semiconductor Research and Development Ctr. (United States)
Timothy A. Brunner, IBM Semiconductor Research and Development Ctr. (United States)
Eric Coker, IBM Semiconductor Research and Development Ctr. (United States)
Robert H. Fair, IBM Semiconductor Research and Development Ctr. (United States)
George L. Mack, IBM Semiconductor Research and Development Ctr. (United States)
Scott M. Mansfield, IBM Semiconductor Research and Development Ctr. (United States)


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