Share Email Print

Optical Engineering

Empirical dark current modeling for complementary metal oxide semiconductor active pixel sensor
Author(s): Igor Shcherback; Alexander A. Belenky; Orly Yadid-Pecht
Format Member Price Non-Member Price
PDF $20.00 $25.00

Paper Abstract

We present an empirical dark current model for CMOS active pixel sensors (APSs). The model is based on experimental data taken of a 256 x 256 APS chip fabricated via HP in a standard 0.5-?m CMOS technology process. This quantitative model determines the pixel dark current dependence on two contributing factors: the "ideal" dark current determined by the photodiode junction, introduced here as a stable shot noise influence of the device active area, and a leakage current due to the device active area shape, i.e., the number of corners present in the photodiode and their angles. This part is introduced as a process- induced structure stress effect.

Paper Details

Date Published: 1 June 2002
PDF: 4 pages
Opt. Eng. 41(6) doi: 10.1117/1.1475995
Published in: Optical Engineering Volume 41, Issue 6
Show Author Affiliations
Igor Shcherback, Ben-Gurion Univ. of the Negev (Israel)
Alexander A. Belenky, Ben-Gurion Univ. of the Negev (Israel)
Orly Yadid-Pecht, Ben-Gurion Univ. of the Negev (Israel)

© SPIE. Terms of Use
Back to Top