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Optical Engineering

X-cut LiNbO3 optoelectronic device passivated by silicon nitride film
Author(s): Futoshi Yamamoto; Yasuyuki Miyama; Hirotoshi Nagata; Masumi Tamai
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Paper Abstract

Silicon nitride (Si3N4) passivation was attempted on x-cut LiNbO3 10-Gb/s optical integrated modulators. Although silicon nitride films are commonly used to chemically protect semiconductor device surfaces,1 to our knowledge, applicability of the film to rf optoelectronic devices such as high-speed LiNbO3 modulators has not been reported. The purpose of our investigation is to confirm that the silicon nitride passivation films do not degrade the electro-optic (EO) characteristics and bias-drift performance of LiNbO3 modulators.

Paper Details

Date Published: 1 June 2001
PDF: 4 pages
Opt. Eng. 40(6) doi: 10.1117/1.1367257
Published in: Optical Engineering Volume 40, Issue 6
Show Author Affiliations
Futoshi Yamamoto, Sumitomo Osaka Cement Co., Ltd. (Japan)
Yasuyuki Miyama, Sumitomo Osaka Cement Co., Ltd. (Japan)
Hirotoshi Nagata, Sumitomo Osaka Cement Co., Ltd. (Japan)
Masumi Tamai, Sumitomo Osaka Cement Co. Ltd. (Japan)

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