San Diego Convention Center
San Diego, California, United States
9 - 13 August 2015
Conference 9553
Low-Dimensional Materials and Devices
Wednesday - Thursday 12 - 13 August 2015
This conference is no longer accepting submissions.
Late submissions may be considered subject to chair approval. For more information, please contact Megan Artz.
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Abstract Due:
26 January 2015

Author Notification:
6 April 2015

Manuscript Due Date:
13 July 2015

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Conference Chairs
  • Nobuhiko P. Kobayashi, Univ. of California, Santa Cruz (United States)
  • A. Alec Talin, Sandia National Labs. (United States)
  • M. Saif Islam, Univ. of California, Davis (United States)
  • Albert V. Davydov, National Institute of Standards and Technology (United States)

Program Committee
  • Kristine A. Bertness, National Institute of Standards and Technology (United States)
  • Shadi A. Dayeh, Los Alamos National Lab. (United States)
  • Supratik Guha, IBM Thomas J. Watson Research Ctr. (United States)
  • Jung Han, Yale Univ. (United States)
  • Chennupati Jagadish, The Australian National Univ. (Australia)
  • Mutsumi Kimura, Ryukoku Univ. (Japan)
  • Takhee Lee, Gwangju Institute of Science and Technology (Korea, Republic of)
  • Marina S. Leite, Univ. of Maryland, College Park (United States)
  • Francois Leonard, Sandia National Labs., California (United States)

Program Committee continued...
  • Samuel S. Mao, Lawrence Berkeley National Lab. (United States)
  • Sanjay Mathur, Univ. zu Köln (Germany)
  • Samuel T. Picraux, Los Alamos National Lab. (United States)
  • Paola Prete, Istituto per la Microelettronica e Microsistemi (Italy)
  • Sharka M. Prokes, U.S. Naval Research Lab. (United States)
  • Zhifeng Ren, Boston College (United States)
  • Atsuhito Sawabe, Aoyama Gakuin Univ. (Japan)
  • Fred Semendy, U.S. Army Research Lab. (United States)
  • Loucas Tsakalakos, GE Global Research (United States)
  • Emanuel Tutuc, The Univ. of Texas at Austin (United States)
  • Lionel Vayssieres, Xi'an Jiaotong Univ. (China)
  • George T. Wang, Sandia National Labs. (United States)

Call for
Low-dimensional material systems possessing at least one of their dimensions in the nanometer scale offer intriguing physical properties and undiscovered pathways toward revolutionary new device concepts. Controlled synthesis of quantum dots, nanowires and monolayer/few-layer thin films on various substrates result in building blocks that reveal a wealth of interesting physical properties. Devices fabricated from such platforms could offer significantly improved performance. Control of thermodynamics and kinetics in synthesis at the nanometer scale would offer unprecedented opportunities to tailor microscopic and macroscopic physical properties of such material systems. To further pursue this tremendous opportunities, however, many fundamental questions need to be addressed and technological barriers need to be overcome. This conference provides a forum for the presentation and discussion of synthesis and characterization of low-dimensional material systems tailored at the nanometer scale. The scope of the conference also includes unique and peculiar physical properties exhibited by such materials. Design, fabrication, and characterization of novel device platforms that employ low-dimensional material systems are also of interest, as well as interfacing and integration of such devices toward novel electronics, photonics, sensors, and energy conversion and storage.

Topics of interest include:
  • synthesis of zero-dimensional material systems (e.g., core-shell nanoparticles, quantum dots) and their device integration
  • synthesis of one-dimensional material systems (e.g., nanowires and nanorods), control of their orientation and morphology, and device integration
  • templated, catalyzed and uncatalyzed, tip assisted, field induced, locally heated synthesis methods of low-dimensional materials
  • self-limiting deposition technique such as atomic layer deposition (ALD) that can produce ultrathin and conformal thin film structures for many applications including thin film devices, display technology, energy storage and capture, as well as solid state lighting
  • role of strain and extended defects on synthesis and spatial ordering of nanoscale structures and on their optical and transport properties
  • introduction of electrically/optically active impurities and their roles in low-dimensional structures; dopant spatial distributions and segregation
  • electrical contact formation and interface properties between nanoscale structures and metal contacts
  • nanoscale synthesis compatible to and integral onto CMOS devices; scalable and mass-manufacturable interfacing for electronics, photonics, optoelectronics, sensing and energy conversion
  • 3D heterogeneous integration, application of advanced patterning techniques for positioning and dimension control of nanostructures, integration with MEMS
  • heterogeneous interface characteristics, DC, RF and high frequency characterization, defects, noise, traps, coherent- incoherent structures: mechanical, acoustic, magnetic, and multiferroic properties
  • physical characteristics of nanometer-scale structures analyzed individually and in ensembles, ex-situ and in-situ studies
  • novel electrical, optical, and structural characterization techniques for the low-dimensional structures and device platforms.
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