San Diego Convention Center
San Diego, California, United States
17 - 21 August 2014
Conference 9174
Nanoepitaxy: Materials and Devices VI
Tuesday - Thursday 19 - 21 August 2014
Important
Dates
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Abstract Due:
3 February 2014

Author Notification:
14 April 2014

Manuscript Due Date:
21 July 2014

Conference
Committee
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Conference Chairs
  • Nobuhiko P. Kobayashi, Univ. of California, Santa Cruz (United States)
  • A. Alec Talin, Sandia National Labs. (United States)
  • Albert V. Davydov, National Institute of Standards and Technology (United States)
  • M. Saif Islam, Univ. of California, Davis (United States)

Program Committee
  • Kristine A. Bertness, National Institute of Standards and Technology (United States)
  • Necmi Biyikli, Virginia Commonwealth Univ. (United States)
  • Shadi A. Dayeh, Los Alamos National Lab. (United States)
  • Supratik Guha, IBM Thomas J. Watson Research Ctr. (United States)
  • Jung Han, Yale Univ. (United States)
  • Muhammad M. Hussain, King Abdullah Univ. of Science and Technology (Saudi Arabia)
  • Chennupati Jagadish, The Australian National Univ. (Australia)
  • Francois Leonard, Sandia National Labs., California (United States)

Program Committee continued...
  • Samuel S. Mao, Lawrence Berkeley National Lab. (United States)
  • Tariq Manzur, Naval Undersea Warfare Ctr. (United States)
  • Nezih Pala, Florida International Univ. (United States)
  • Samuel T. Picraux, Los Alamos National Lab. (United States)
  • Sharka M. Prokes, U.S. Naval Research Lab. (United States)
  • Zhifeng Ren, Boston College (United States)
  • Atsuhito Sawabe, Aoyama Gakuin Univ. (Japan)
  • Loucas Tsakalakos, GE Global Research (United States)
  • Emanuel Tutuc, The Univ. of Texas at Austin (United States)
  • Lionel Vayssieres, Xi'an Jiaotong Univ. (China)
  • George T. Wang, Sandia National Labs. (United States)

Tuesday 19 August Show All Abstracts
Session 1:
Group III-V and IV Nanostructures I
Tuesday 19 August 2014
1:00 PM - 3:05 PM
Formation of vertical MnAs/InAs heterojunction nanowires (Invited Paper)
Paper 9174-1
Time: 1:00 PM - 1:25 PM
Author(s): Shinjiro Hara, Hiromu Fujimagari, Shinya Sakita, Hokkaido Univ. (Japan)
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Nanoprobe electrical measurements of single nanowire structures (Invited Paper)
Paper 9174-2
Time: 1:25 PM - 1:50 PM
Author(s): Simon Watkins, Simon Fraser Univ. (Canada)
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Van der Waals epitaxy of InAs nanostructures on graphene (Invited Paper)
Paper 9174-3
Time: 1:50 PM - 2:15 PM
Author(s): Young Joon Hong, Sejong Univ. (Korea, Republic of); Takashi Fukui, Hokkaido Univ. (Japan)
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Direct band gap wurtzite GaP nanowires for LEDs and quantum devices (Invited Paper)
Paper 9174-4
Time: 2:15 PM - 2:40 PM
Author(s): Simone Assali, Technische Univ. Eindhoven (Netherlands); Marcel M. Verheijen, Philips Innovation Services Eindhoven, High Tech Campus (Netherlands); Julian Stangl, Institute of Semiconductor and Solid State Physics, Johannes Kepler University (Austria); Jos J. Haverkort, TU/e Eindhoven (Netherlands); Erik P. Bakkers, Technische Univ. Delft (Netherlands)
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Development of III-V compound semiconductor nanowire array solar cells (Invited Paper)
Paper 9174-5
Time: 2:40 PM - 3:05 PM
Author(s): Lan Fu, Q. Gao, Yesaya C. Wenas, Z. Li, Yu-Heng Lee, Fan Wang, Sudha Mokkapati, Hark Hoe Tan, Chennupati Jagadish, The Australian National Univ. (Australia)
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Coffee Break 3:05 PM - 3:35 PM
Session 2:
1D Nanostructures I
Tuesday 19 August 2014
3:35 PM - 4:50 PM
Silicon epitaxy in nanoscale for photovoltaic applications (Invited Paper)
Paper 9174-6
Time: 3:35 PM - 4:00 PM
Author(s): Jinkyoung Yoo, Los Alamos National Lab. (United States); Shadi A. Dayeh, Univ. of California, San Diego (United States); Wei Tang, Univ. of California, Los Angeles (United States); Norman C. Bartelt, Sandia National Labs. (United States); Alp T. Findikoglu, Samuel T. Picraux, Los Alamos National Lab. (United States)
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ZnO nanostructures: from material to systems (Invited Paper)
Paper 9174-7
Time: 4:00 PM - 4:25 PM
Author(s): Mehdi F. Anwar, Univ. of Connecticut (United States)
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Structural and electro-optical properties of one-dimensional CdSe-InP heterojunctions (Invited Paper)
Paper 9174-8
Time: 4:25 PM - 4:50 PM
Author(s): Babak Nikoobakht, National Institute of Standards and Technology (United States)
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Wednesday 20 August Show All Abstracts
Session 3:
Group III-Nitride Nanostructures
Wednesday 20 August 2014
8:00 AM - 11:15 AM
  • Session Chair:
  • M. Saif Islam, Univ. of California, Davis (United States)
Fabrication of GaN n-core/p-shell nanopillar arrays for optoelectronic applications
Paper 9174-9
Time: 8:00 AM - 8:15 AM
Author(s): Albert V. Davydov, Sergiy Krylyuk, Ratan Debnath, Jong-Yoon Ha, Baomei Wen, Abhishek Motayed, National Institute of Standards and Technology (United States)
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Vertical type GaN nanowire/thin film p-n junction light-emitting diodes (Invited Paper)
Paper 9174-10
Time: 8:15 AM - 8:40 AM
Author(s): Young Joon Hong, Sejong Univ. (Korea, Republic of); Sung Jin An, Kumoh National Institute of Technology (Korea, Republic of)
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Nanomaterials and nanostructures for LEDs: advanced nano-scale correlation of structural and optical properties of GaN nanorods (Invited Paper)
Paper 9174-11
Time: 8:40 AM - 9:05 AM
Author(s): Frank Bertram, Otto-von-Guericke-Univ. Magdeburg (Germany)
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P-type III-nitride nanowires: epitaxial growth, surface charge properties, and novel device applications (Invited Paper)
Paper 9174-12
Time: 9:05 AM - 9:30 AM
Author(s): Zetian Mi, McGill Univ. (Canada)
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Top-down III-nitride nanowires: from LEDs to lasers (Invited Paper)
Paper 9174-13
Time: 9:30 AM - 9:55 AM
Author(s): George T. Wang, Qiming Li, Jeremy B. Wright, Sandia National Labs. (United States); Huiwen Xu, The Univ. of New Mexico (United States); Jonathan J. Wierer, Daniel D. Koleske, Jeffrey J. Figiel, Sandia National Labs. (United States); Antonio Hurtado, Luke F. Lester, Changyi Li, Steven R. J. Brueck, The Univ. of New Mexico (United States); Ting-Shan Luk, Igal Brener, Sandia National Labs. (United States)
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Coffee Break 9:55 AM - 10:25 AM
Simulatenous optical and structural investigation of extended defects in nitride nanorods (Invited Paper)
Paper 9174-14
Time: 10:25 AM - 10:50 AM
Author(s): Frank Bertram, Otto-von-Guericke-Univ. Magdeburg (Germany)
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Bulk GaN and its application as substrates in building quantum nanostructures for some electronic and optoelectronic devices (Invited Paper)
Paper 9174-15
Time: 10:50 AM - 11:15 AM
Author(s): Michal Bockowski, Institute of High Pressure Physics (Poland), TopGaN Ltd. (Poland)
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Lunch/Exhibition Break 11:15 AM - 1:00 PM
Session 4:
2D Nanostructures and Devices I
Wednesday 20 August 2014
1:00 PM - 2:05 PM
  • Session Chair:
  • A. A. Talin, Sandia National Labs. (United States)
Van der Waals epitaxy of Bi2Se3 via hybrid physical-chemical vapor deposition for topological insulator applications (Invited Paper)
Paper 9174-16
Time: 1:00 PM - 1:25 PM
Author(s): Joseph E. Brom, Joan M. Redwing, The Pennsylvania State Univ. (United States)
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Growth of crystalline Al2O3 via low temperature thermal ALD: nanomaterial substrate phase stabilization (Invited Paper)
Paper 9174-17
Time: 1:25 PM - 1:50 PM
Author(s): Sharka M. Prokes, U.S. Naval Research Lab. (United States); Michael Katz, NRC (United States); Mark E. Twigg, U.S. Naval Research Lab. (United States)
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Aluminum titanium oxide films for optical encapsulation and broadband optical coupling
Paper 9174-18
Time: 1:50 PM - 2:05 PM
Author(s): Juan J. Diaz Leon, Univ. of California, Santa Cruz (United States), Nanostructured Energy Conversion Technology and Research (United States); Ernest Demaray, Demaray, LLC (United States), Antropy, Inc. (United States); David M. Fryauf, Junce Zhang, Kate J. Norris, Univ. of California, Santa Cruz (United States), Nanostructured Energy Conversion Technology and Research (United States); Mark Johnson, Tango Systems, Inc. (United States); Nobuhiko P. Kobayashi, Univ. of California, Santa Cruz (United States), Nanostructured Energy Conversion Technology and Research (United States)
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Session 5:
Organic-Inorganic Integration
Wednesday 20 August 2014
2:05 PM - 3:20 PM
  • Session Chair:
  • A. A. Talin, Sandia National Labs. (United States)
Insights into enhanced MOF growth mechanisms on fibrous mats (Invited Paper)
Paper 9174-19
Time: 2:05 PM - 2:30 PM
Author(s): Sarah D. Shepherd, RTI International (United States); Junjie Zhao, Mark D. Losego, Paul C. Lemaire, Philip S. Williams, Christopher J. Oldham, North Carolina State Univ. (United States); Howard J. Walls, RTI International (United States); Gregory W. Peterson, U.S. Army Edgewood Chemical Biological Ctr. (United States); Gregory N. Parsons, North Carolina State Univ. (United States)
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Molecule meets MOF: bridging the gap between organic and inorganic electronic materials (Invited Paper)
Paper 9174-20
Time: 2:30 PM - 2:55 PM
Author(s): Mark D. Allendorf, A. Alec . Talin, Michael E. Foster, Vitalie Stavila, François Léonard, Sandia National Labs. (United States)
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Organic-inorganic hybrid films using molecular-atomic layer deposition (MALD) (Invited Paper)
Paper 9174-21
Time: 2:55 PM - 3:20 PM
Author(s): Jiyoung Kim, The Univ. of Texas at Dallas (United States)
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Coffee Break 3:20 PM - 3:50 PM
Session 6:
Group III-V and IV Nanostructures II
Wednesday 20 August 2014
3:50 PM - 5:20 PM
  • Session Chair:
  • Joan M. Redwing, The Pennsylvania State Univ. (United States)
Unconventional growth methods of indium phosphide nanowires on non-single crystal surfaces for thermoelectric devices
Paper 9174-22
Time: 3:50 PM - 4:05 PM
Author(s): Kate J. Norris, Junce Zhang, David M. Fryauf, Juan J. Diaz Leon, Univ. of California, Santa Cruz (United States); Elane Coleman, Gary S. Tompa, Structured Materials Industries, Inc. (United States); Nobuhiko P. Kobayashi, Univ. of California, Santa Cruz (United States)
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Magnetic doping of Ge-quantum dots: growth studies exploring the feasibility of modulating QD properties (Invited Paper)
Paper 9174-23
Time: 4:05 PM - 4:30 PM
Author(s): Petra Reinke, Univ. of Virginia (United States)
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GaAs-AlGaAs core-shell nanowire arrays: correlating MOVPE growth and luminescence properties (Invited Paper)
Paper 9174-24
Time: 4:30 PM - 4:55 PM
Author(s): Paola Prete, Istituto per la Microelettronica e Microsistemi (Italy); Nico Lovergine, Univ. del Salento (Italy)
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Fluctuations of the surface potential and photoconductivity in nanoheterostructures Si/Ge with SiGe nanoislands (Invited Paper)
Paper 9174-25
Time: 4:55 PM - 5:20 PM
Author(s): Darina P. Storozhuk, Sergey V. Kondratenko, National Taras Shevchenko Univ. of Kyiv (Ukraine); Yuriy N. Kozyrev, Chuiko Institute of Surface Chemistry (Ukraine)
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Thursday 21 August Show All Abstracts
Session 7:
2D Nanostructures and Devices II
Thursday 21 August 2014
8:30 AM - 11:30 AM
  • Session Chair:
  • Ekaterina Pomerantseva, Drexel Univ. (United States)
TiO2 nanocrystal evolution in high-temperature atomic layer deposition and its application in solar energy harvesting (Invited Paper)
Paper 9174-26
Time: 8:30 AM - 8:55 AM
Author(s): Xudong Wang, Univ. of Wisconsin-Madison (United States)
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Nanoelectronic synaptic devices and materials for brain-inspired computational architectures (Invited Paper)
Paper 9174-27
Time: 8:55 AM - 9:20 AM
Author(s): Rashmi Jha, The Univ. of Toledo (United States)
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Investigation on resistive switching characteristics of ZnO thin film (Invited Paper)
Paper 9174-28
Time: 9:20 AM - 9:45 AM
Author(s): Min Wei, Univ. of California, Santa Cruz (United States); Fan Yang, Chunfu Li, Hong Deng, Univ. of Electronic Science and Technology of China (China)
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Nano electronics with 2D layered semiconductors (Invited Paper)
Paper 9174-29
Time: 9:45 AM - 10:10 AM
Author(s): Saptarshi Das, Argonne National Lab. (United States)
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Coffee Break 10:10 AM - 10:40 AM
Continued development of dual-gated bilayer graphene devices (Invited Paper)
Paper 9174-30
Time: 10:40 AM - 11:05 AM
Author(s): Stephen W. Howell, Thomas E. Beechem, Allister B. Hamilton, Taisuke Ohta, Khalid M. Hattar, Sandia National Labs. (United States)
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Effect of interlayer orientation on electronic structure of 2D layered materials (Invited Paper)
Paper 9174-31
Time: 11:05 AM - 11:30 AM
Author(s): Abbas Ebnonnasir, Univ. of California, Los Angeles (United States), Colorado School of Mines (United States); Cristian V. Ciobanu, Colorado School of Mines (United States); Suneel Kodambaka, Univ. of California, Los Angeles (United States)
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Lunch/Exhibition Break 11:30 AM - 1:10 PM
Session 8:
1D Nanostructures II
Thursday 21 August 2014
1:10 PM - 3:20 PM
  • Session Chair:
  • Albert V. Davydov, National Institute of Standards and Technology (United States)
High-precision transfer-printing of vertically oriented 1D semiconductor arrays and integration into flexible devices
Paper 9174-32
Time: 1:10 PM - 1:25 PM
Author(s): Mark Triplett, Univ. of California, Davis (United States); François Léonard, Sandia National Labs. (United States); M. Saif Islam, Univ. of California, Davis (United States)
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Carbon nanotube terahertz detector (Invited Paper)
Paper 9174-33
Time: 1:25 PM - 1:50 PM
Author(s): Francois Leonard, Sandia National Labs. (United States)
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Acid-leached α-MnO2 nanowires for electrochemical energy storage (Invited Paper)
Paper 9174-34
Time: 1:50 PM - 2:15 PM
Author(s): Bryan Byles, Drexel Univ. (United States); Arunkumar Subramanian, Virginia Commonwealth Univ. (United States); Ekaterina Pomerantseva, Drexel Univ. (United States)
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Analyzing the evolution of microstructural disorder in thermally annealed bismuth telluride nanowires using a combined STEM/CBED approach (Invited Paper)
Paper 9174-35
Time: 2:15 PM - 2:40 PM
Author(s): Kristopher J. Erickson, Steven J. Limmer, William G. Yelton, Caitlin Rochford, Michael P. Siegal, Douglas L. Medlin, Sandia National Labs. (United States)
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SAD-GLAD core-shell nanorod arrays for fuel cell, photodetector, and solar cell electrode applications
Paper 9174-36
Time: 2:40 PM - 2:55 PM
Author(s): Deborah J. Myers, Argonne National Laboratory (United States); Tansel Karabacak, Univ. of Arkansas at Little Rock (United States)
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Recombination-induced migration and reactions of hydrogen in SiC (Invited Paper)
Paper 9174-37
Time: 2:55 PM - 3:20 PM
Author(s): Yaroslav Koshka, Mississippi State Univ. (United States)
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Coffee Break 3:20 PM - 3:50 PM
Session 9:
3D Heterogeneous Materials and Device Integration
Thursday 21 August 2014
3:50 PM - 5:10 PM
Understanding and optimization of the sensitivity of nanoscale FET-based biosensors (Invited Paper)
Paper 9174-38
Time: 3:50 PM - 4:15 PM
Author(s): Kaveh Shoorideh, Chi On Chui, Univ. of California, Los Angeles (United States)
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Compound and alloyed contacts to Ge/Si and InGaAs nanowires and FinFETs (Invited Paper)
Paper 9174-39
Time: 4:15 PM - 4:40 PM
Author(s): Shadi A. Dayeh, Univ. of California, San Diego (United States); Binh-Minh Nguyen, Los Alamos National Lab. (United States); Renjie Chen, Univ. of California, San Diego (United States); Wei Tang, Univ. of California, Los Angeles (United States)
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On-chip integrated 3D lithium ion batteries
Paper 9174-40
Time: 4:40 PM - 4:55 PM
Author(s): Dmitry Ruzmetov, Andrei A. Kolmakov, Paul M. Haney, National Institute of Standards and Technology (United States); A. Alec Talin, Sandia National Labs. (United States)
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3D gate-all-around field effect transistors enabled by bridging nanowires
Paper 9174-41
Time: 4:55 PM - 5:10 PM
Author(s): Jin Yong Oh, Univ. of California, Davis (United States); Hyun-June Jang, Won-Ju Cho, Kwangwoon Univ. (Korea, Republic of); Jong-Tae Park, Univ. of Incheon (Korea, Republic of); M. Saif Islam, Univ. of California, Davis (United States)
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