San Jose Convention Center and San Jose Marriott
San Jose, California, United States
24 - 28 February 2013
Conference 8679
Extreme Ultraviolet (EUV) Lithography IV
Monday - Thursday 25 - 28 February 2013
Important
Dates
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Abstract Due:
10 September 2012

Author Notification:
29 October 2012

Manuscript Due Date:
28 January 2013

Conference
Committee
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Monday 25 February Show All Abstracts
Session 1:
Invited I
Monday 25 February 2013
1:30 PM - 3:30 PM
EUV in HVM: prospects and challenges (Invited Paper)
Paper 8679-1
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Effects of multilayer period on EUVL imaging for 2X node and beyond (Invited Paper)
Paper 8679-2
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Investigation of EUV pellicle feasibility (Invited Paper)
Paper 8679-3
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EUV resist materials design for 15nm half pitch and below (Invited Paper)
Paper 8679-4
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Session 2:
EUV Resists: Joint Session with Conferences 8679 and 8682
Monday 25 February 2013
4:00 PM - 6:00 PM
Location: Conv. Ctr. 210 B
Oxide nanoparticle EUV resists: toward understanding the mechanism of positive and negative tone patterning
Paper 8679-5
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Novel EUV resist materials and process for 20nm half pitch and beyond
Paper 8682-38
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Effect of leaving group design on EUV lithography performance
Paper 8679-6
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The novel solution for negative impact of out-of-band and outgassing by top coat materials in EUVL
Paper 8682-9
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Secondary electrons in EUV lithography
Paper 8679-7
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Rectification of EUV-patterned contact holes using directed self-assembly
Paper 8682-10
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Tuesday 26 February Show All Abstracts
Session 3:
Sources
Tuesday 26 February 2013
8:00 AM - 10:00 AM
EUVL: A reality in the making
Paper 8679-8
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LPP-EUV light source development for high volume manufacturing lithography
Paper 8679-9
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Advances in computer simulations of LPP sources for EUV lithography
Paper 8679-10
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Lifetime and refurbishment of multilayer LPP collector mirrors
Paper 8679-12
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Contamination concerns at the intermediate focus of an extreme ultraviolet light source
Paper 8679-13
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Physics and technology of the lithium EUV lamp
Paper 8679-117
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Session 4:
Mask I
Tuesday 26 February 2013
10:30 AM - 12:10 PM
Dressed-photon nanopolishing for extreme ultraviolet mask substrate defect mitigation
Paper 8679-14
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EUV mask defect analysis from mask to wafer printing
Paper 8679-15
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Defect printability comparing actinic printing with advanced simulation for EUV masks
Paper 8679-16
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EUV actinic blank inspection: from prototype to production
Paper 8679-17
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E-beam defect inspection of EUV reticles and wafers
Paper 8679-18
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Session 5:
Resist Outgassing
Tuesday 26 February 2013
1:40 PM - 3:20 PM
Relationship between resist related outgassing and witness sample contamination in the NXE outgas qualification using electrons and EUV
Paper 8679-19
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Resist outgassing contamination growth results using both photon and electron exposures
Paper 8679-20
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Study of EUV outgassing spatial distribution toward witness plate in the EUV outgas tester
Paper 8679-21
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Correlation of electron- and EUV-induced optics contamination from resist outgas species other than C: composition and efficacy of atomic-H cleaning
Paper 8679-22
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Balancing lithographic performance and resist outgassing in EUV resists
Paper 8679-23
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Session 6:
Optics and Metrology
Tuesday 26 February 2013
3:50 PM - 5:30 PM
EUVL resist-based aberration metrology
Paper 8679-24
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In-situ optical testing of exposure tools via localized wavefront curvature sensing
Paper 8679-25
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Alignment performance of fiducial mark on EUV blanks
Paper 8679-26
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Three-dimensional phase defect inspection of EUV masks using the TSOM method
Paper 8679-27
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Application of phase shift focus monitor in EUVL process control
Paper 8679-28
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Joint Panel Discussion
Tuesday 26 February 2013
7:30 PM - 9:00 PM
Location: Conv. Ctr. Hall 3

Joint Panel with conferences 8679, 8680, 8682, 8683, 8684
Wednesday 27 February Show All Abstracts
Session 7:
OPC and Modeling
Wednesday 27 February 2013
8:00 AM - 9:40 AM
EUV multilayer defect compensation (MDC) by absorber pattern modification, film deposition, and multilayer peeling techniques
Paper 8679-29
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Evaluation of methods to improve EUV OPC model accuracy
Paper 8679-30
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Fast 3D thick mask model for full-chip EUVL simulations
Paper 8679-31
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Process and proximity correction, and verification for extreme ultraviolet lithography
Paper 8679-32
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Modeling strategies for EUV mask multilayer defect dispositioning and repair
Paper 8679-33
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Session 8:
EUV Resists
Wednesday 27 February 2013
10:10 AM - 12:10 PM
Development status of EUV resist to break the triangle
Paper 8679-34
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Evaluation of EUV resist performance with interference lithography towards 11 nm half-pitch and beyond
Paper 8679-35
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Resist process applications to improve EUV patterning
Paper 8679-36
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Development of molecular resist derivatives for EUV lithography
Paper 8679-37
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Relationship between stochastic effect and resist pattern defect in extreme ultraviolet lithography
Paper 8679-38
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EUV sensitive Si containing hard mask (Si-HM) for PTD and NTD process in EUVL
Paper 8679-39
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Session 9:
High NA and Magnification
Wednesday 27 February 2013
1:40 PM - 3:20 PM
Mask effects for high-NA EUV: impact of NA, chief-ray-angle, and reduction ratio (Invited Paper)
Paper 8679-40
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Considerations for high-numerical aperture EUV lithography (Invited Paper)
Paper 8679-41
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Projection optics for extreme ultraviolet lithography (EUVL) micro-field exposure tools (METs) with a numerical aperture of 0.5
Paper 8679-42
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Mask 3D effects and compensation for high NA EUV lithography
Paper 8679-43
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Session 10:
Mask II
Wednesday 27 February 2013
3:50 PM - 5:50 PM
Commissioning an EUV mask microscope for lithography generations reaching 8 nm
Paper 8679-44
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The role of defect characterization in the progression toward defect-free EUV mask blanks
Paper 8679-45
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Experimental phase defect printability evaluation using a programmed phase defect in EUVL mask
Paper 8679-46
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EUV defect characterization using quantitative nanomechanical mechanical and nanoelectric mapping
Paper 8679-47
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Challenges in EUV mask blank deposition for high volume manufacturing
Paper 8679-48
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Extending Ru capping layer durability under physical force cleaning
Paper 8679-49
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Session PS1:
Poster Session
Wednesday 27 February 2013
6:00 PM - 8:00 PM
Location: Conv. Ctr. Hall 2

The following posters will be on display after 10:00 am on Wednesday. The interactive poster session with authors in attendance will be Wednesday evening from 6:00 to 8:00 pm.

All registered attendees are invited to attend the poster sessions. Come view the high-quality papers that are presented in this alternative format, and interact with the poster authors who will be available for discussion. Enjoy light refreshments while networking with colleagues in your field.

Attendees and authors are required to wear their conference registration badges to the poster sessions.
Limitation of OAI + AttPSM in EUVL
Paper 8679-56
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Experimental verification of EUV mask limitations at high numerical apertures
Paper 8679-57
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Homogeneity improvement of TiO2-SiO2 glass synthesized by the soot method and its evaluation using the ultrasonic measurement system
Paper 8679-58
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Inspection and compositional analysis of sub-20 nm EUV mask blank defects by thin film decoration technique
Paper 8679-59
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Propagation of surface topography of EUV blank substrate through multilayer and impact of phase defect structure on wafer image
Paper 8679-60
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Modeling studies on alternative EUV mask concepts for higher NA
Paper 8679-61
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Low thermal expansion material (LTEM) cleaning and optimization for extreme ultraviolet (EUV) blank deposition
Paper 8679-62
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Local area EUV mask patterning for native defect analysis
Paper 8679-63
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Evaluation of novel projection electron microscopy (PEM) optics for EUV mask inspection
Paper 8679-64
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Registration accuracy improvement of fiducial mark on EUVL mask with MIRAI EUV ABI prototype
Paper 8679-65
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Study on EUV mask defect inspection with hp 16nm node using simulated projection electron microscope images
Paper 8679-66
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Development of 3D Monte Carlo simulations for predicting multilayer geometry of pit-type EUV defects
Paper 8679-67
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Effect of phase defect shape on ABI signal intensity and defect image intensity on wafer with simulation
Paper 8679-68
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Mathematical model for calculating speckle contrast through focus
Paper 8679-69
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Evaluating the effect of EUV multilayer buried defects on feature printability using a stochastic resist model
Paper 8679-70
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Effects of varying the parameters in witness-sample-based photoresist outgas testing: dependence of the carbon growth on pumping speed and the dose, time, and area of resist exposure
Paper 8679-71
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Status of EUV reflectometry at PTB
Paper 8679-72
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Hartmann wavefront sensor for EUV radiation
Paper 8679-73
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A reverse design method for EUV lithography illumination system
Paper 8679-74
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Patterning at 6.5 nm wavelength using interference lithography
Paper 8679-75
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Simulation analysis of LER and dose tradeoffs for EUV resists with photo-decomposable quenchers
Paper 8679-76
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Relation between sensitivity and resolution in polymer bound PAGs and polymer blend PAGs
Paper 8679-77
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Assessment of out-of-band radation from EUV AD1 and investigation of spectral sensitivity resists in the DUV region
(Canceled)
Paper 8679-78
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Stochastic resist patterning simulation using attenuated PSM for EUV lithography
Paper 8679-79
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Quencher distribution engineering for out-of-band insensitive EUV resists: experiments and stochastic simulation
Paper 8679-80
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Prediction of resist sensitivity for 13.5-nm EUV and 6.x-nm EUV extension from sensitivity for EBL
Paper 8679-81
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Study of LWR reduction and pattern collapse suppression for 16nm node EUV resists
Paper 8679-82
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Reaction mechanisms of various chemically amplified EUV and EB resist
Paper 8679-83
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Development of an atomic hydrogen system for treatment of EUV mask blanks
Paper 8679-84
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Resist outgassing characterization based on the resist compositions and process
Paper 8679-85
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Zero-CTE controlled TiO2-SiO2 glasses for EUVL
(Canceled)
Paper 8679-86
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Enhancements to the electrodeless Z-pinch EUV source to support first and second-generation actinic mask inspection tools
Paper 8679-87
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Collector optic in-situ Sn removal using hydrogen plasma
Paper 8679-88
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Laser produced plasma EUV light source for EUVL patterning at 20nm node and beyond
Paper 8679-89
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High-brightness LPP source for EUVL applications
Paper 8679-90
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Important processes in modeling and optimization of EUV lithography sources
Paper 8679-91
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Long-term behavior of fuel delivery system for EUV sources using tin droplets
Paper 8679-92
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Magnetic mitigation of debris for EUV sources
Paper 8679-93
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Enhancing resolution with pupil filtering for projection printing systems with fixed or restricted illumination angular distribution
Paper 8679-94
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Roughness and variability in EUV lithography: Who is to blame? (part 1)
Paper 8679-95
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Imaging capability and lithographic characterization on 0.9-sigma SEMATECH Albany MET
Paper 8679-96
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7nm node EUV predictive study of mask LER transference to wafer
Paper 8679-97
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Silica aerogel can capture flying particles in EUV tools
Paper 8679-98
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Impact of EUV mask roughness on lithography performance
Paper 8679-99
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Track processing optimizations for different EUV resist platforms: preparing for a NXE:3300 baseline process
Paper 8679-100
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Simulation-assisted layout biasing in EUV lithography and prediction of an optimum resist parameter space
Paper 8679-101
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Deep ultraviolet out-of-band characterization of EUVL scanners and resists
Paper 8679-102
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Investigation of coat-develop track system for EUV resist processing
Paper 8679-104
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Heat behavior of extreme-ultraviolet pellicle including mesh support
Paper 8679-105
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The need for EUV lithography at advanced technology for sustainable wafer cost
Paper 8679-107
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The study of novel PAG containing acid amplifier in EUV resist material
Paper 8679-108
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Synthesis of molecular glass photoresists based on bisphenol A backbone and their application in EUV photolithography
Paper 8679-109
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High-power EUV discharge-produced plasma source based on liquid tin jet electrodes
Paper 8679-110
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Measuring local critical dimension uniformity of contact holes: variability and correlation issues
(Canceled)
Paper 8679-111
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Molecular glass photoresists based on 9,9'-spirobifluorene derivatives: Synthesis and application in EUV photolithography
Paper 8679-112
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Optimizing XPS tool performance for characterizing trace contamination elements for EUV resist outgas testing
Paper 8679-113
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Particle detection of sub-20nm particles in low pressure conditions for applications in the semiconductor industry
Paper 8679-114
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Comparison of O2-N2 and H2 plasma cleaning for EUV applications
Paper 8679-115
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Effect of cleaning on EUV masks
Paper 8679-116
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Thursday 28 February Show All Abstracts
Session 11:
Invited II
Thursday 28 February 2013
8:30 AM - 12:00 PM
ASML's NXE platform performance and volume introduction (Invited Paper)
Paper 8679-50
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CO2/Sn LPP EUV sources for device development and HVM (Invited Paper)
Paper 8679-51
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Optics for ASML's NXE:3300B platform (Invited Paper)
Paper 8679-52
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Through-focus EUV multilayer defect repair with nanomachining (Invited Paper)
Paper 8679-53
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Patterning challenges of EUV lithography for 1X-nm node DRAM and beyond (Invited Paper)
Paper 8679-54
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Towards manufacturing a 10nm node device with complementary EUV lithography (Invited Paper)
Paper 8679-55
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