San Jose Convention Center and San Jose Marriott
San Jose, California, United States
24 - 28 February 2013
Conference 8680
Alternative Lithographic Technologies V
Monday - Thursday 25 - 28 February 2013
Important
Dates
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Abstract Due:
10 September 2012

Author Notification:
29 October 2012

Manuscript Due Date:
28 January 2013

Conference
Committee
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Monday 25 February Show All Abstracts
Opening Remarks and Introduction
Monday 25 February 2013
3:30 PM - 3:35 PM
Session 1:
Keynote Session
Monday 25 February 2013
3:35 PM - 5:35 PM
Directed self-assembly of block copolymers for pattern generation (Keynote Presentation)
Paper 8680-1
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NIL Template : progress and challenges (Keynote Presentation)
Paper 8680-2
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Electron multi-beam technology for mask and wafer writing at 0.1nm address grid (Keynote Presentation)
Paper 8680-3
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Tuesday 26 February Show All Abstracts
Session 2:
DSA Materials and Applications
Tuesday 26 February 2013
8:20 AM - 10:10 AM
Sequential infiltration synthesis in lithography (Invited Paper)
Paper 8680-4
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Scaling-down lithographic dimensions with block-copolymer materials: 10nm-sized features with PS-b-PMMA
Paper 8680-5
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Block copolymer orientation control using a top-coat surface treatment
Paper 8680-6
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Modeling the rate of morphology evolution during annealing of block copolymer thin films
Paper 8680-7
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Healing LER using directed self assembly: treatment of EUVL resists with aqueous solutions of block copolymers
Paper 8680-8
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Session 3:
UV Imprint Lithography
Tuesday 26 February 2013
10:30 AM - 12:00 PM
Thermally-modulated, multi-site alignment control for nanoimprinting
Paper 8680-9
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Single-digit nanofabrication by UV step-and-repeat nanoimprint lithography
Paper 8680-10
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Defect reduction for semiconductor memory applications using jet and flash imprint lithography
Paper 8680-11
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Novel fluorinated compounds for releasing material in nanoimprint lithography
Paper 8680-12
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Session 4:
DSA Materials and Processing: Joint Session with Conference 8680 and 8682
Tuesday 26 February 2013
1:20 PM - 3:10 PM
Location: Conv. Ctr. Hall 3
Advances in directed self assembly integration and manufacturability at 300 mm (Invited Paper)
Paper 8682-19
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Chemical epitaxy of strongly segregating block copolymers with top-coats for assembling perpendicularly oriented lamella with sub-10nm dimensions
Paper 8680-13
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New materials and processes for directed self-assembly
Paper 8680-14
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Progress in directed self-assembly hole shrink applications
Paper 8682-20
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Materials and processes enabling block copolymers for lithographic applications
Paper 8680-15
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Session 5:
E-Beam Direct-Write for High-Volume Manufacturing I
Tuesday 26 February 2013
3:30 PM - 5:00 PM
Reflective electron beam lithography: lithography results using CMOS controlled digital pattern generator chip
Paper 8680-16
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Development of maskless electron-beam lithography using nc-Si electron-emitter array
Paper 8680-17
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Matching of beams on the MAPPER MATRIX tool: a simulation study
Paper 8680-18
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50 keV electron multibeam mask writing with 0.1nm address grid
Paper 8680-19
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Panel Discussion on Challenges for Directed Self-Assembly
Tuesday 26 February 2013
5:00 PM - 7:00 PM
Location: Conv. Ctr. Hall 3

Moderators:
Joy Y. Cheng, IBM Almaden Research Ctr. and William M. Tong, KLA-Tencor Corp.

Directed self-assembly (DSA), which combines lithography-defined pre-patterns with self-assembled phase-separated polymers, has become a promising path to continue the scaling of semiconductor devices. As a materials-based resolution enhancement technique, DSA has been demonstrated to augment the patterning capability of 193i, EUV and E-beam lithography, and has begun to transition from research labs to development lines in past two years. While there have been important advances on the materials and process fronts, to enable DSA as a resolution enhancement technology, more efforts are required in areas such as DSA-aware design and low defectivity. The characteristic length and nature of phase-separated polymers impose DSA-specific design restrictions and design-related defectivities. The integration of compact DSA model into design and computational lithography may facilitate the co-optimization of design, materials, and processes. On the defectivity front, more experimental data on inspection, metrology and unit process monitoring are needed to identify the defect sources and intrinsic DSA defects. Please join experts in design, DFM, metrology, and other critical areas in DSA to discuss these critical challenges for DSA.
Joint Panel Discussion
Tuesday 26 February 2013
7:30 PM - 9:00 PM
Location: Conv. Ctr. Hall 3

Joint Panel with conferences 8679, 8680, 8682, 8683, 8684
Wednesday 27 February Show All Abstracts
Session 6:
DSA Metrology and Inspection: Joint Session with Conferences 8680 and 8681
Wednesday 27 February 2013
8:00 AM - 9:50 AM
Location: Conv. Ctr. 230 B
Defect source analysis of directed self-assembly process (DSA of DSA) (Invited Paper)
Paper 8680-20
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Line-edge roughness in directed self assembly
Paper 8680-21
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Application of optical CD metrology for alternative lithography
Paper 8681-29
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Hybrid approach to optical CD metrology of directed self-assembly lithography
Paper 8681-30
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Three-dimensional characterization of block copolymer lithography patterns using resonant x-ray scattering
Paper 8680-22
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Session 7:
E-Beam Direct-Write for High-Volume Manufacturing II
Wednesday 27 February 2013
10:30 AM - 12:00 PM
MAPPER: progress toward a high-volume manufacturing system
Paper 8680-23
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Quantifying throughput improvements for electron-beam lithography using a suite of benchmark patterns
Paper 8680-24
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Data delivery system for MAPPER using image compression
Paper 8680-25
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Status of chemically amplified resists performances to address line-width roughness and local CD uniformity specifications for the MAPPER MATRIX pre-production platform
Paper 8680-26
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Session 8:
Nanoimprint Applications
Wednesday 27 February 2013
1:20 PM - 3:10 PM
30nm nanochannels with plasmonic bowtie nano-antenna: wafer scale device fabrication and applications for biosensing
Paper 8680-27
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Lithography challenges for 2 Tdpsi bit patterned media fabrication and beyond
Paper 8680-28
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Meter-long substrate nanopatterning using rolling mask optical lithography
Paper 8680-29
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Fabrication of silicon lines with sub-25nm full pitch on 8-mm-wide circular tracks from directed self-assembly of PS-b-PMMA
Paper 8680-30
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High performance wire grid polarizers using jet and flashTM imprint lithography
Paper 8680-31
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Session 9:
Design for Manufacturability for DSA: Joint Session with Conferences 8680 and 8684
Wednesday 27 February 2013
3:30 PM - 5:20 PM
Location: Conv. Ctr. Hall 3
Directed self-assembly pattern generation of basic FinFET circuit constructs (Invited Paper)
Paper 8680-32
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Rethinking ASIC design with next generation lithography and process integration
Paper 8684-12
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Deterministically isolated gratings through the directed self-assembly of block copolymers
Paper 8680-33
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Computational solution of inverse directed self-assembly problem
Paper 8680-34
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Design strategy of small topographical guiding templates for sub-15nm integrated circuits contact hole patterns using block copolymer directed self assembly
Paper 8680-35
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Session PSWed:
Posters-Wednesday
Wednesday 27 February 2013
6:00 PM - 8:00 PM
Location: Conv. Ctr. Hall 2

The following posters will be on display after 10:00 am on Wednesday. The interactive poster session with authors in attendance will be Wednesday evening from 6:00 to 8:00 pm.

All registered attendees are invited to attend the poster sessions. Come view the high-quality papers that are presented in this alternative format, and interact with the poster authors who will be available for discussion. Enjoy light refreshments while networking with colleagues in your field.

Attendees and authors are required to wear their conference registration badges to the poster sessions.
Session PS1:
Poster Session: Directed Self-Assembly
Wednesday 27 February 2013
6:00 PM - 8:00 PM
Location: Conv. Ctr. Hall 2
Dissipative particle dynamics study on directed self-assembly in holes
Paper 8680-38
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Dissipative particle dynamics simulations to optimize contact hole shrink process using graphoepitaxial directed self-assembly
Paper 8680-55
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Computational simulation of block copolymer directed self-assembly in small topographical guiding templates
Paper 8680-57
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Polymer blends for directed self-assembly
Paper 8680-58
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Self-assembled lithography and potential applications to electronic devices
Paper 8680-59
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Graphoepitaxial directed self-assembly of PS-b-PDMS block copolymers on nanopatterned silicon nitride substrates
Paper 8680-60
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Multifunctional hardmask neutral layer for directed self-assembly (DSA) patterning
Paper 8680-61
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Perpendicular orientation of block-co-polymer on controlled neutralization layer
Paper 8680-62
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Block-copolymer healing of simple defects in a chemoepitaxial template
Paper 8680-63
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Using process monitor wafers to understand directed self-assembly defects
Paper 8680-64
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Partial patterning of periodic nanostructures using block copolymer lithography
Paper 8680-65
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Orientation and position-controlled block copolymer nanolithography for bit-patterned media
Paper 8680-66
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PS-b-PAA as a high χ polymer for directed self-assembly: a study of solvent and thermal annealing processes for PS-b-PAA
Paper 8680-93
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PS-b-PHEMA: synthesis, characterization, and processing of a high χ polymer for directed self-assembly lithography
Paper 8680-94
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PS-b-PHOST as a high χ block copolymers for directed self assembly: optimization of underlayer and solvent anneal processes
Paper 8680-95
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Coarse grained molecular dynamics model of block copolymer directed self-assembly
Paper 8680-96
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Tuning domain size of block copolymers for directed self assembly using polymer blending: molecular dynamics simulation studies
Paper 8680-97
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Effects of block copolymer polydispersity and χN on pattern line edge roughness and line width roughness from directed self-assembly of diblock copolymers
Paper 8680-98
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Session PS2:
Poster Session: Direct-Write/Maskless Lithography
Wednesday 27 February 2013
6:00 PM - 8:00 PM
Location: Conv. Ctr. Hall 2
Alignment strategy for mixed e-beam and optical lithography
Paper 8680-67
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Block co-polymer multiple patterning directed self-assembly on PS-OH brush layer and AFM based nanolithography
Paper 8680-69
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Image contrast of line-cut / contact hole features in Complementary E-Beam Lithography (CEBL)
Paper 8680-70
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Direct-write maskless lithography using patterned oxidation of Si-substrate Induced by femtosecond laser pulses
Paper 8680-71
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A slim column cell of 12nm resolution for wider application of e-beam lithography
Paper 8680-72
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Practical study on the electron-beam-only alignment strategy for the electron beam direct writing technology
Paper 8680-73
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Practical proof of CP element based design for 14nm node and beyond
Paper 8680-75
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Reticle level compensation for long range effects
Paper 8680-76
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Preliminary investigation of shot noise, dose, and focus latitude for e-beam direct write
Paper 8680-77
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Contrast enhanced exposure strategy in multi-beam mask writing
Paper 8680-78
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Session PS3:
Poster Session: Nanoimprint Lithography
Wednesday 27 February 2013
6:00 PM - 8:00 PM
Location: Conv. Ctr. Hall 2
Sub-22 nm silicon template nanofabrication by advanced spacer patterning technique for NIL applications
Paper 8680-79
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A process for low cost wire grid polarizers
Paper 8680-80
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Session PS4:
Poster Session: Other Lithographic Approaches
Wednesday 27 February 2013
6:00 PM - 8:00 PM
Location: Conv. Ctr. Hall 2
Resist development for 2nm quantum optical lithography
Paper 8680-81
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Process enhancements for negative tone development (NTD)
Paper 8680-82
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Direct electron beam patterning of sub-5nm monolayer graphene interconnects
Paper 8680-83
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Thursday 28 February Show All Abstracts
Session 10:
DSA Vias
Thursday 28 February 2013
8:00 AM - 10:10 AM
Patterning process for semiconductor using directed self assembly (Invited Paper)
Paper 8680-36
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The potential of block copolymer’s directed self-assembly for contact hole shrink and contact multiplication
Paper 8680-37
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Exploration of the directed self-assembly based nano-fabrication design space using computational simulations
Paper 8680-56
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The hole shrink problem: Theoretical studies of directed self-assembly in cylindrical confinement
Paper 8680-39
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Novel error mode analysis method for graphoepitaxial directed self-assembly lithography based on the dissipative particle dynamics method
Paper 8680-40
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Defectivity study of directed self-assembly of cylindrical diblock copolymers in laterally confined thin channels
Paper 8680-41
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Session 11:
Nanoprobe Array Direct-Write Technologies
Thursday 28 February 2013
10:40 AM - 11:50 AM
Scanning probe lithography approach for beyond CMOS devices (Invited Paper)
Paper 8680-42
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0.1-nanometer resolution positioning stage for sub-10 nm scanning probe lithography
Paper 8680-44
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Mix & match electron beam & scanning probe lithography for high throughput sub-10 nm lithography
Paper 8680-45
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Session 12:
E-Beam Direct-Write for High-Volume Manufacturing III
Thursday 28 February 2013
1:20 PM - 3:10 PM
Influence of high-energy electron irradiation on ultra-low-k characteristics and transistor performance (Invited Paper)
Paper 8680-46
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A dose modification strategy of electron beam direct writing considering TDDB reliability in LSI interconnects
Paper 8680-47
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Influence of data volume and EPC on process window in massively parallel e-beam direct write
Paper 8680-48
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A study of total blur for ultimate resolution of electron-beam lithography toward 11nm half-pitch technology and beyond
Paper 8680-49
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MAPPER alignment sensor evaluation on process wafers
Paper 8680-50
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Session 13:
DSA Lines-Spaces
Thursday 28 February 2013
3:30 PM - 5:00 PM
Fabrication of 28nm pitch Si fins with DSA lithography (Invited Paper)
Paper 8680-51
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Directed self-assembly process implementation in a 300mm pilot line environment
Paper 8680-52
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Process sensitivities in exemplary chemo-epitaxy directed self-assembly integration
Paper 8680-53
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Large-scale dynamics of directed self-assembly defects on chemically pre-patterned surface
Paper 8680-54
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