San Jose Convention Center and San Jose Marriott
San Jose, California, United States
22 - 27 February 2009
Conference 7271
Alternative Lithographic Technologies
Tuesday - Thursday 24 - 26 February 2009
Important
Dates
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Abstract Due:
11 August 2008

Author Notification:
13 October 2008

Manuscript Due Date:
26 January 2009

Conference
Committee
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Tuesday 24 February Show All Abstracts
Welcome and Introduction
Tuesday 24 February 2009
7:55 AM - 8:00 AM
Location: Conv. Ctr. B1-4
Session 1:
Keynotes: EUV
Tuesday 24 February 2009
8:00 AM - 10:00 AM
EUVL system: moving towards production (Keynote Presentation)
Paper 7271-1
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LPP source system development for HVM (Keynote Presentation)
Paper 7271-2
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Integration of EUV lithography in the fabrication of 22-nm node devices (Keynote Presentation)
Paper 7271-3
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Session 2:
Keynotes: Alternative Litho Technologies
Tuesday 24 February 2009
10:30 AM - 12:30 PM
Patterning single atom architectures (Keynote Presentation)
Paper 7271-4
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On the integration of memristors with CMOS using nanoimprint lithography (Keynote Presentation)
Paper 7271-5
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REBL nanowriter: Reflective Electron Beam Lithography (Keynote Presentation)
Paper 7271-6
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Session 3:
EUV Source
Tuesday 24 February 2009
1:40 PM - 3:20 PM

Sessions 3-4 run concurrently with sessions 5-6.
Laser-produced plasma source development for EUV lithography
Paper 7271-7
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Xenon DPP source technologies for EUVL exposure tools
Paper 7271-8
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Sn DPP source-collector modules: status of Alpha sources, Beta developments, and HVM experiments
Paper 7271-9
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5 sr high-temperature collector mirror
Paper 7271-10
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Design and fabrication considerations of EUVL collectors for HVM
Paper 7271-11
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Session 4:
EUV Mask
Tuesday 24 February 2009
3:50 PM - 5:50 PM

Sessions 3-4 run concurrently with sessions 5-6.
Characteristics and issues of an EUVL mask applying phase-shifting thinner absorber for device fabrication
Paper 7271-12
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EUVL mask inspection and repair technology development at MIRAI-Selete
Paper 7271-13
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Nanopit smoothing by cleaning
Paper 7271-14
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Compensation of overlay errors due to mask bending and non-flatness for EUV masks
Paper 7271-15
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Analysis of Coulomb and Johnsen-Rahbek electrostatic chuck performance in the presence of particles for EUV lithography
Paper 7271-17
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Protection efficiency of a standard compliant EUV reticle handling solution
Paper 7271-18
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Session 5:
EBDW
Tuesday 24 February 2009
1:40 PM - 3:20 PM
Location: Conv. Ctr. C1-4

Sessions 3-4 run concurrently with sessions 5-6.
Experimental evaluation of 3rd-order imaging beam (Invited Paper)
Paper 7271-19
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Cell projection use in maskless lithography for 45nm and 32nm logic nodes
Paper 7271-20
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Optimal character-size exploration for increasing throughput of MCC lithographic systems
Paper 7271-21
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Selection of Gaussian-beam and raster-scan parameters in electron-beam direct-write lithography considering device patterning and performance variability
Paper 7271-22
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Session 6:
Multibeam and Tools Patterning
Tuesday 24 February 2009
3:50 PM - 6:10 PM
Location: Conv. Ctr. B1-4

Sessions 3-4 run concurrently with sessions 5-6.
PML2: the maskless multibeam solution for the 22nm node and beyond (Invited Paper)
Paper 7271-23
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MAPPER: high-throughput maskless lithography
Paper 7271-24
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Development of 10-beams EBDW system using 3rd-order imaging technique
(Canceled)
Paper 7271-25
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Coulomb blur advantage of a multi-shaped beam lithography approach
Paper 7271-26
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Development of resist process for 5-KV multi-beam technology
Paper 7271-27
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Advances in zone-plate-array lithography: photons versus electrons in next-generation maskless lithography
Paper 7271-28
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Wednesday 25 February Show All Abstracts
Session 7:
EUV Printing
Wednesday 25 February 2009
8:00 AM - 10:00 AM
Stability and imaging of the ASML EUV alpha demo tool
Paper 7271-29
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Flare evaluation of ASML alpha demo tool
Paper 7271-30
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SEMATECH research activities on EUV full-field exposure tool
Paper 7271-31
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The SEMATECH Berkeley microfield exposure tool: learning at the 22-nm node and beyond
Paper 7271-32
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Out-of-band exposure characterization with the SEMATECH Berkeley 0.3-NA microfield exposure tool
Paper 7271-33
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Estimation of cost comparison of lithography technologies at the 22-nm half-pitch node
Paper 7271-34
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Session 8:
EUV Lifetime
Wednesday 25 February 2009
10:30 AM - 12:10 PM

Sessions 8-9-10 run concurrently with sessions 11-12-13.
Debris detection, mitigation, and cleaning methods for life-time improvement of integrated-EUVL-scanner stepper systems
Paper 7271-35
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Carbon film growth on model electron-irradiated MLM cap layer: interaction of benzene and MMA vapor with TiO2 surface
Paper 7271-36
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Protective capping layers for EUVL optics
Paper 7271-37
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Tracking down sources of carbon contamination in EUVL exposure tools
Paper 7271-38
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Measuring the EUV-induced contamination rates of TiO2-capped multilayer optics by anticipated production-environment hydrocarbons
Paper 7271-39
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Session 9:
EUV Applications
Wednesday 25 February 2009
1:40 PM - 3:20 PM

Sessions 8-9-10 run concurrently with sessions 11-12-13.
The application of EUV lithography for 40nm node DRAM device and beyond
Paper 7271-40
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Comparative study of DRAM cell patterning between ArF immersion and EUV lithography
Paper 7271-41
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Demonstration of full-field patterning of 32 nm test chips using EUVL
Paper 7271-42
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EUVL reticle defectivity evaluation
Paper 7271-43
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Recent progress of EUV full-field exposure tool in Selete
Paper 7271-44
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Session 10:
EUV OPC
Wednesday 25 February 2009
3:50 PM - 6:10 PM

Sessions 8-9-10 run concurrently with sessions 11-12-13.
Exposure tool settings and OPC strategies for EUV lithography at the 16-nm node
Paper 7271-45
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Requirements and results of a full-field EUV OPC flow
Paper 7271-46
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Imaging budgets for EUV optics: ready for 22-nm node and beyond
Paper 7271-47
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Modeling and experiments of non-telecentric thick mask effects for EUV lithography
Paper 7271-48
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Mask diffraction analysis and optimization for EUV masks
Paper 7271-144
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Comparison of fast 3D simulation and actinic inspection for EUV masks with buried defects
Paper 7271-50
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EUV-patterning characterization using a 3D mask simulation and field EUV scanner
Paper 7271-51
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Session 11:
Maskless
Wednesday 25 February 2009
10:30 AM - 12:10 PM
Location: Conv. Ctr. C1-4

Sessions 8-9-10 run concurrently with sessions 11-12-13.
Full-chip characterization of compression algorithms for direct-write maskless lithography systems (Invited Paper)
Paper 7271-52
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Scalable (24-140 Gbps) optical data link well adapted for future maskless lithography applications
Paper 7271-53
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Proximity effect correction for multiple-electron-beam direct-write lithography
Paper 7271-54
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Evaluation and mitigation of proximity effects for 5kV multi-beam technology: application for 32-nm node and beyond
Paper 7271-55
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Session 12:
Nanoimprint I
Wednesday 25 February 2009
1:40 PM - 3:20 PM
Location: Conv. Ctr. C1-4

Sessions 8-9-10 run concurrently with sessions 11-12-13.
Step and flash imprint lithography for manufacturing patterned media (Invited Paper)
Paper 7271-56
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UV-NIL template making and imprint evaluation
Paper 7271-94
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Soft stamp UV-nanoimprint lithography for fabrication of laser diodes
Paper 7271-58
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Nanoimprint lithography for sub-10-nm complex patterns
Paper 7271-59
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Session 13:
Nanoimprint II
Wednesday 25 February 2009
3:50 PM - 6:10 PM
Location: Conv. Ctr. C1-4

Sessions 8-9-10 run concurrently with sessions 11-12-13.
SEMATECH's nanoImprint program: a key enabler for nanoimprint introduction
Paper 7271-60
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Recent developments in UV nanoimprint stepper technology for sub-30-nm half-pitch lithography
Paper 7271-61
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Direct laser write (DLW) as a versatile tool in manufacturing templates for imprint lithography on flexible substrates
Paper 7271-62
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Polyhedral Oligomeric Silsesquioxane (POSS) functional-patterns directly fabricated by nanoimprint lithography
Paper 7271-63
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Evaluation of the CD-SEM Vistec LWM90xx for line-width measurement of nanoimprint templates
Paper 7271-64
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Physical properties of thin nanoimprint polymer films measured by photo-acoustic metrology
Paper 7271-65
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High-resolution defect inspection of step-and-flash imprint lithography for 32-nm half-pitch patterning
Paper 7271-66
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Thursday 26 February Show All Abstracts
Session 14:
EUV Tools
Thursday 26 February 2009
8:00 AM - 10:20 AM
Nikon EUVL development progress update
Paper 7271-67
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Development status of Canon's full-field EUVL tool
Paper 7271-68
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Development progress of optics for EUVL at Nikon
Paper 7271-69
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Process liability evaluation for EUVL
Paper 7271-74
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Characterization of a 0.25NA full-field EUV exposure tool
Paper 7271-70
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Development of actinic full-field EUV mask blank inspection tool at MIRAI-Selete
Paper 7271-71
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Improving the performance of the actinic inspection tool with an optimized alignment procedure
Paper 7271-72
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Session 15:
EUV Resist
Thursday 26 February 2009
10:50 AM - 11:50 AM
Assessment of EUV resist readiness for 32-nm hp manufacturing and extendibility study of EUV ADT using state-of-the-art resist
Paper 7271-73
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Synthesis and kinetics of novel acid amplifiers for use in EUV photoresists
Paper 7271-75
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EUV resist outgassing: scaling to HVM intensity
Paper 7271-76
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Session 16:
Nanoimprint Materials
Thursday 26 February 2009
1:40 PM - 3:20 PM
Debonding of UV-cured nanoimprint resist-release layer systems (Invited Paper)
Paper 7271-78
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In situ measurement of annealing-induced line shape evolution in nanoimprinted polymers using scatterometry
Paper 7271-79
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Characterization of vinyl ether UV-cure nanoimprint resist
Paper 7271-80
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A study of filling process for UV nanoimprint lithography using a fluid simulation
Paper 7271-81
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Session 17:
Directed Self Assembly
Thursday 26 February 2009
3:50 PM - 6:10 PM
Self assembly of DNA nanostructures on lithographically patterned surfaces (Invited Paper)
Paper 7271-82
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Resolution enhancement based on directed polymer self assembly
Paper 7271-83
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Lithographically directed materials assembly
Paper 7271-84
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Control of placement of self-assembled patterns from block copolymers
Paper 7271-85
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Assembly of block copolymers on chemically nanopatterned substrates: a platform for nanoscale lithography
Paper 7271-86
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From nanoimprint lithography to self-assembly: pattern generation for bit-patterned media beyond 1 Tbit/in2
(Canceled)
Paper 7271-87
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Session PS:
Posters-Thursday
Thursday 26 February 2009
5:30 PM - 8:00 PM
Location: Conv. Ctr. Hall 3

The following posters will be displayed all day Thursday. Authors will be present during the formal poster session Thursday evening between 5:30 and 8:00 pm for discussion. Authors may set-up their posters after 9:00 am on Thursday.
Session PS1:
Nanoimprint
Thursday 26 February 2009
5:30 PM - 8:00 PM
Location: Conv. Ctr. Hall 3
Automated imprint mask cleaning for step-and-flash imprint lithography
Paper 7271-88
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Optimization of droplets for UV-NIL using coarse-grain simulation of resist flow
Paper 7271-89
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Industrial applications demanding low and high resolution features realized by soft UV-NIL and hot embossing
Paper 7271-90
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Characterization of crosslinking density of UV-nanoimprint resist confined inside mold
Paper 7271-92
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Step-and-flash imprint lithography: design and synthesis of directly patternable dielectric materials
Paper 7271-93
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Session PS2:
E-Beam and Maskless
Thursday 26 February 2009
5:30 PM - 8:00 PM
Location: Conv. Ctr. Hall 3
Fabrication of metrology test structures for future technology nodes using high-resolution variable-shaped e-beam direct write
Paper 7271-95
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Sub-30-nm resolution parallel EB lithography based on a planar type Si nanowire array ballistic electron source
Paper 7271-96
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Optimization of BSE-detector for e-beam direct write lithography
Paper 7271-97
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3D ion multibeam processing with the CHARPAN PMLP tool and with the single ion-beam FIB tool optimized with the IonRevSim software
Paper 7271-98
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Registration marks for the characterization and tuning of individual beamlets of a PML2 Tool in the sub-10-nm range
Paper 7271-99
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Monitor and self-diagnostic technology for mask e-beam writing system
Paper 7271-100
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Proximity effect correction for 20nm dimension patterning
Paper 7271-101
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Session PS3:
Novel Technologies
Thursday 26 February 2009
5:30 PM - 8:00 PM
Location: Conv. Ctr. Hall 3
Fabrication of sub-10-nm pattern using diblock copolymer
Paper 7271-102
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Interference assisted lithography for patterning of 1D gridded design
Paper 7271-103
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Plasmonic nanolithography for sub-100-nm patterning using array ridge apertures
Paper 7271-104
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Session PS4:
EUV Source
Thursday 26 February 2009
5:30 PM - 8:00 PM
Location: Conv. Ctr. Hall 3
Kinetic simulation of debris from an LPP EUV source
Paper 7271-105
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High-performance next-generation EUV lithography light source
Paper 7271-106
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Grid spectral purity filters for suppression of infrared radiation in laser-produced plasma EUV sources
Paper 7271-108
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Ablation depth in planar Sn targets during the interaction with a Nd:YAG laser for extreme ultraviolet lithography
Paper 7271-109
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Atomic processes in the LPP and LA-DPP EUV sources
Paper 7271-110
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Remote plasma cleaning of Sn from an EUV collector mirror
Paper 7271-112
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Debris characteristics and mitigation of a laser plasma tin-contained liquid jet/droplet targets
Paper 7271-113
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Evaluation at the intermediate focus for EUV light source
Paper 7271-114
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Laser diagnostics of laser-ablated tin particles from droplet targets
Paper 7271-115
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Performance evaluation of source collector module for extreme ultraviolet small-field exposure tool
Paper 7271-116
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Effects of the ratio of sphere size to laser focal spot on the dominant in-band EUV emitting region
Paper 7271-117
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Measurement of particle flux at the intermediate focus of a DPP source
Paper 7271-118
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Laser-produced plasma light source for EUVL
Paper 7271-119
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Dependence of laser parameter on conversion efficiency in high-repetition-rate laser-ablation-discharge EUV source
Paper 7271-120
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Development of a high-pulse-rate EUV source
Paper 7271-121
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Optical element for full spectral purity from IR-generated EUV light sources
Paper 7271-159
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Session PS5:
EUV Mask
Thursday 26 February 2009
5:30 PM - 8:00 PM
Location: Conv. Ctr. Hall 3
Removal of contaminants by plasma assisted cleaning by metastable atom neutralization (PACMAN)
Paper 7271-122
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Precise evaluation of zero-CTE temperature of EUVL-grade TiO2-SiO2 ultra-low-expansion glass using the line-focus-beam ultrasonic material characterization system
Paper 7271-123
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Defect mitigation and reduction in EUVL mask blanks
Paper 7271-124
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Inspection 13.2-nm table-top full-field microscope
Paper 7271-125
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Experimental study of particle-free mask handling
Paper 7271-126
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The performance of an actinic full-field EUVL mask blank inspection system
Paper 7271-127
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Defect printability of thin absorber mask in EUV lithography
Paper 7271-128
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Mask defect verification using actinic inspection and defect mitigation technology
Paper 7271-129
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Analysis of a relation between the spatial frequency of electrostatic chuck and induced mask inplane distortion (IPD)
Paper 7271-130
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Characterization of electrostatic chucks for extreme ultraviolet lithography
Paper 7271-131
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Experimental evaluation of particulate contamination on backside of EUV reticle
Paper 7271-132
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Collecting EUV mask images through focus by wavelength tuning
Paper 7271-155
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Session PS6:
EUV Performance
Thursday 26 February 2009
5:30 PM - 8:00 PM
Location: Conv. Ctr. Hall 3
Extreme ultraviolet holographic lithography with a table-top laser
Paper 7271-133
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Analysis of carbon deposition on multilayer mirrors by using two different beamlines
Paper 7271-134
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Assumptions and trade-offs of extreme ultraviolet optics contamination modeling
Paper 7271-135
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Durability of capped multilayer mirrors for high volume manufacturing extreme ultraviolet lithography tool
Paper 7271-136
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Fabrication of half-pitch 32-45-nm SRAM patterns with EUVL
Paper 7271-137
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The influence of out-of-band radiation on EUV optics contamination
Paper 7271-138
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Carbon contamination of extreme ultraviolet (EUV) masks and its effect on imaging
Paper 7271-139
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Improved contrast and reflectivity of multilayer reflective optics for wavelengths beyond the extreme UV
Paper 7271-156
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Development of evaluation technologies of contaminating materials from Sn-DPP SoCoMo
Paper 7271-158
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Session PS7:
EUV Metrology
Thursday 26 February 2009
5:30 PM - 8:00 PM
Location: Conv. Ctr. Hall 3
EUVL dosimetry at NIST
Paper 7271-140
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High-accuracy EUV reflectometry at large optical components and oblique incidence
Paper 7271-141
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Gratings development for standalone EUV interferometer
Paper 7271-142
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Ellipsometric and surface acoustic wave sensing of carbon contamination on EUV optics
Paper 7271-157
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Session PS8:
EUV OPC
Thursday 26 February 2009
5:30 PM - 8:00 PM
Location: Conv. Ctr. Hall 3
Analysis of EUVL mask effects under partially coherent illumination
Paper 7271-145
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Assessment of full-chip level EUV optical correction for sub-40nm memory device
Paper 7271-146
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Incident angle change caused by different off-axis illumination in extreme ultraviolet lithography
Paper 7271-147
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Evaluation of shadowing and flare effect for EUV tool
Paper 7271-149
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Flare compensation for EUVL
Paper 7271-150
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Session PS9:
EUV Resist
Thursday 26 February 2009
5:30 PM - 8:00 PM
Location: Conv. Ctr. Hall 3
Measurement and analysis of EUV photoresist related outgassing and contamination
Paper 7271-152
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RLS tradeoff vs. quantum yield of high PAG EUV resists
Paper 7271-153
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Investigation of EUV-process sensitivities for wafer-track processing
Paper 7271-154
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